Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs

Authors

  • Fairouz Lagraf aboratory of active components and materials, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria. b Faculty of Exact Sciences, Natural and Life Science, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria.
  • Rechem Djamil Laboratory of materials and structure of electromechanical systems and their reliability, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria. d Department of electrical engineering, Faculty of Sciences and Applied Sciences, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria.
  • Kamel Guergouri aboratory of active components and materials, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria. b Faculty of Exact Sciences, Natural and Life Science, University Larbi Ben M’hidi Oum El Bouaghi, 4000, Algeria.

Keywords:

Surrounding-gate MOSFET;, ate-Trial-material;, unctionless transistor, Trapped charges

Abstract

nterface trapped charges effect on the performance of Junction Less-Trial Material Cylindrical Surrounding-gate
MOSFETs (JLTMCSG-MOSFETs) has been studied. An analytical model has been used for this purpose, it is based on
solving the two-dimensional Poisson’s equation in cylindrical coordinates. The device performance has been investigated as
a function of surface potential, electrical field, drain induced barrier lowering (DIBL), subthreshold Slope (SS) and
threshold voltage (Vth). The obtained results show that the performance of the device was improved when using the trial
material gate with different work functions and interface trapped charges. This study confirms that the analytical model used
is useful not only for circuit simulations, but also for device design and optimization.

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Published

2025-01-05

How to Cite

Lagraf, F., Djamil , R., & Guergouri , K. (2025). Study of interface trapped charges effect on performance of junction less trial material cylindrical surrounding-gate MOSFETs. Journal of New Technology and Materials, 9(01), 52–58. Retrieved from http://review.univ-oeb.dz/ojs.jntm/index.php/jntm/article/view/115

Issue

Vol. 9 No. 01 (2019)

Section

Articles

License

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This work is licensed under a Creative Commons Attribution 4.0 International License.